钙钛矿氧化物是一类具有丰富物理化学性质和应用前景的功能材料，通过化学掺杂等手段适当调节其性能，已经成为光电特性研究中重要的一类材料。由于掺杂钙钛矿氧化物薄膜本身的复杂性及多样性，针对光电类的钙钛矿氧化物薄膜的制备及性能的研究还存在较多的不足，特别是针对不同掺杂的类钙钛矿氧化物薄膜的光电性能还缺乏深入系统的研究，对其光电过程的输运机理也需要深入的分析和研究。本文主要利用掺杂方法制备了多种钙钛矿氧化薄膜及异质结，研究了其在激光照射条件下的电学性能，并对其电输运特性进行了分析和讨论。本文的主要工作包括以下几个方面： (1)利用脉冲激光沉积法(PLD)在单晶STO(100)衬底上制备BFO／LSMO薄膜异质结。通过XRD分析BFO／LSMO膜异质结的基本结构。测量了其温度在300K和80K的磁滞回线。研究了在不同电流条件下的BFO层和LSMO层间电阻随温度的变化规律，并讨论了其磁性产生的机制。 (2)利用溶胶-凝胶法制备了Ni的掺杂的PbTi〓Ni〓O₃薄膜，并对其结构、电学和光电特性进行了研究。制备的PbTi〓Ni〓O₃薄膜是不含杂质相或烧绿石相的多晶结构。Ni的取代可以减小PbTi〓Ni〓O₃薄膜带隙，增加介电常数和铁电极化，PbTi₀.₈Ni₀.₂O₃膜的最大剩余极化(P〓)达到58．1μC／㎝²。 (3)通过CaH₂原BaSnO₃的方法，并利用外延方法制备了H掺杂BaSnO₃(BOS-H)薄膜，并研究了其光电特性。氢的加入明显改善了BaSnO₃薄膜的导电性，使BaSnO₃薄膜发生了从绝缘性向金属性的转变。氢掺杂BSO薄膜的高载流子密度及高迁移率，从而提高了其光电响应特性。同时，光电阻的恢复过程可由双指数函数拟合分析，显示载流子的运输和被俘陷载流子的释放是影响BOS-H薄膜光响应特性的主要原因，且被俘陷载流子释放对恢复过程具有决定性的作用。 (4)通过磁控溅射制备了掺杂锰元素的n-ZnO和p-Si异质结。ZMO薄膜表现出很好的整流特性。激光作用下，随着温度的增加，理想因子增加，表明电流的输运机理发生了变化。当反向偏压增加时，光电流急剧增加并在超过某一定电压(V₀)趋于饱和；V₀随着温度降低而增加；当光电流和暗电流的比值α，在反向偏压为7V的情况下，随着温度减小而增加。通过n-ZnO与p-Si异质结的能带原理分析了其输运机理和光响应机理。 (5)通过研究衬底温度和沉积角度对纳米结构的影响，揭示对纳米阵列形成的主动控制机理。AAO衬底提供了一种制备具有各向异性晶粒阵列结构的有效方法，这将有助于加深研究者对衬底纳米形貌对薄膜生长能量学和动力学影响的深入理解，并为制备具有其他新型纳米结构的薄膜提供理论依据和实验基础。 关键词：钙钛矿氧化物，电学性能，光电性能，铁磁性能，光生载流子，纳米晶体

 Perovskite oxides, with their abundant physical, chemical properties, cheapprice, stable performance, easilychemical doping, has become an important class of photoelectric characteristics.Because of the complexity of the doped perovskite oxide filmand diversity, based on photoelectric perovskite oxide thin film preparation and properties of research still exist more insufficient, especially for different kinds of photoelectric properties of perovskite oxide thin films were also without further system research, the transport mechanism of the photovoltaic process also needs in-depth analysis and research.In this paper, a variety of droped perovskite oxide films/heterojunctions were prepared, and the electrical transport properties were analyzed and discussed.The main work of this paper includes the following aspects: (1)BiFeO₃/La₀.₇Sr₀.₃MnO₃ heterostructure was fabricated by pulsed laser ablation. The leakage current conduction was to be dominated by Poole-Frenkel mechanism in the BiFeO₃/ La₀.₇Sr₀.₃MnO₃ heterostructure. Additionally, we report photoconductivity in BiFeO₃/ La₀.₇Sr₀.₃MnO₃ heterostructure under illumination from 160mW/㎝² and 200mW/㎝² green light source. (2)Partial substitution of group 10 metal for titanium is predicted theoretically to be one of the most effective waysto decrease the band gap of PbTiO₃-based ferroelectric photovoltaic materials. It is therefore of interest toexperimentally investigate their ferroelectric and photovoltaic properties. In this work, we focus on the electricaland photocurrent properties of Ni-doped PbTiO₃ thin films prepared via a sol-gel route. The nickelincorporation does not modify the crystalline structure of PbTiO₃ thin film, but it can increase the dielectricconstant, ferroelectric polarization and photocurrent, and simultaneously decrease the band gap. The maximumremnant polarization (Pr) of 58.1 μC/㎝² is observed in PbTi₀.₈Ni₀.₂O₃ thin film, and its photocurrent density isimproved to be approximately one order larger than that of PbTiO₃ thin film and simultaneously exhibits thepolarization-dependent switching characteristic. (3)Hydrogen was introduced into BaSnO₃ through CaH₂ reduction ofBaSnO₃ thin films, and the electrical properties, as well as the photo-response behavior, wereinvestigated. Secondary ion mass spectroscopy demonstrated the uniform distribution of hydrogenwithin the BaSnO₃ thin film. The addition of hydrogen greatly enhanced the conductivity of the BaSnO₃thin film, exhibiting a carrier concentration ～8.04×10¹⁹ ㎝⁻³ and mobility ～9.52㎝²V⁻¹s⁻¹ at 300 K,and thus resulted in a fast relaxation process in the transient photoconductivity, which was characterizedby a double exponential function indicating two physical contributions. (4)Mn doped ZnO (ZMO) thin film was deposited by magnetron sputtering on p-Si (100),X-ray diffraction(XRD)and atomic force microscopy (AFM)were utilized to characterizethe microstructure properties of film. The results show that the ZMO film was consisted of polycrystalline film and crack-free. The temperature dependent transport and photoresponse properties of ZMO/Si heterojunction were investigated. It was found that the heterojunctions shows excellent rectifying behavior. As the temperature decreases, the barrier height and the reverse saturation current decrease, while the ideality factor increases. Photocurrent is produced by illumination. Under reverse bias, photocurrent increases dramatically and reaches saturation at a certain critical voltage. The critical voltage increases as temperature increases. (5)By studying the effect of substrate temperature and deposition angle on nanostructures, an active control mechanism for nanoarray formation was revealed. The results indicate that the periodic array provided by the AAO substrate provides a nucleation density that exceeds the hole density, while a sufficiently high atomic mobility promotes grain aggregation. The AAO substrate provides an effective method for fabricating an anisotropic grain array structure, which will help deepen the deep understanding of the substrate nanotopography on the growth energetics and dynamics of the film, and prepare for the preparation of other The new nanostructured films provide theoretical basis and experimental basis. Key words:Perovskite oxides, electrical properties, photoelectric properties, ferromagnetic properties, photogenerated carriers, nanocrystalline