基于碳化硅等宽禁带半导体新材料的电力电子器件在电力电子应用领域展现出了巨大的潜力，但由于电路设计者和系统应用的厂商对这些宽禁带半导体电力电子器件的性能和优势缺乏足够的认识，目前该类器件在实际应用中推广遇到了很大的阻碍。为了能够在系统中安全地发挥出这些宽禁带半导体电力电子器件的优势，我们需要深入了解器件的动静态特性、电路应用性能以及长期运行的稳定性和可靠性。 宽禁带半导体电力电子器件中，碳化硅(SiC)MOSFET器件因其具备更加简单可靠的驱动方式、更突出的性能和更广的应用范围，被广泛应用于能源、电力、电动汽车等大功率场合，是最重要的新材料电力电子器件，也被人视为传统Si IGBT器件的理想替代品。受单芯片功率容量的限制，多芯片并联是当前SiCMOSFET功率模块的一种常见方式，但是多芯片并联存在芯片成本和性能要求冲突的问题，需要针对这些问题开展定量化的研究，从而进一步优化模块上的芯片数量和模块的工作效率。 SiC MOSEFT功率模块中最常见的基本电路拓扑为半桥电路，这种电路结构上下管之间存在串扰(Crosstalk)，SiC MOSFET的高速硬开关更是加剧了该问题的严重性。因此，对于多芯片并联的SiC MOSFET功率模块，我们还需要进一步研究改良其基本电路的拓扑结构，提升功率模块在高速硬开关应用中的串扰抑制能力。 基于上述专业领域的科学性问题，本论文记载了作者的以下研究工作： 作者首先对商业化的SiC二极管、SiC MOSFET、SiC JFET、SiC BJT和氮化镓HEMT (High electron mobility transistor)等宽禁带半导体电力电子器件以及硅CoolMOS(作为对比)，进行了静态和动态特性的测试，分析了各类器件的特点，并对它们做了对比分析和总结。同时，作者评估了SiC MOSFET导通电阻在高温环境下的变化，研究了SiC MOSFET的高温稳定性。特别的，在SiCMOSFET的稳定性方面，作者针对Cree公司生产的第一代商业化SiCMOSFET器件，基于实测数据开展了建模仿真以及实验验证，推断出了它的热失控温度(thermal run away)，并评估了新一代SiC MOSFET的热失控温度，为这类器件在各领域的广泛应用提供了定量化的安全指标，具有极大的实用价值。 其次，作者完成了对多芯片并联SiC MOSFET模块从设计、制造、测试到评估的流程。首先以一款4芯片并联的SiC MOSFET为例详细介绍了材料选型、Layout阻抗分析、内置解耦电容计算、芯片间距与分析等模块设计过程；然后在20kW Boost测试平台上测试了一款6芯片并联的SiC MOSFET模块在不同环境温度下(模拟车内环境温度)的工作性能，评估了不同环境温度对SiCMOSFET模块性能的影响；最后系统评估了不同芯片数量、不同开关频率、不同负载、不同壳温等条件下的模块性能：1.采用分布式栅极阻抗代替传统的集中式栅极阻抗建立SiC MOSFET模型，实验验证了其具有更高的准确性；2.以此模型为标准检验了采用罗氏线圈测量电流的方式得到的开关损耗的准确度，确定了该方式得到数据并建立开关损耗拟合模型的合理性；3.接着结合上述模型与导通损耗拟合模型，得到整体损耗拟合数据模型；4.根据实测数据建立稳态结温和功耗之间的模型；5.通过实测各类模块在不同功率下的运行性能，验证了损耗和热稳定数据拟合模型；6.最后根据上述两个数据拟合模型对模块性能进行评估和预测，同时从效率和有源区面积等角度对比了SiC MOSFET和Si IGBT器件的性能。 在本论文的最后一部分，作者针对SiC MOSFET半桥电路中高速硬开关工作存在上下管串扰的问题，分析了不同电路参数对串扰引起的栅极电压波动的影响以及不同钳位电路对串扰的抑制效果，研究了米勒钳位和开关器件之间的回路电感对钳位效果的作用。针对多芯片并联半桥模块的应用，本文提出了集成模块内部的分布式米勒钳位驱动布局方式，通过实验验证了该方式在达到抑制串扰目的的同时还能够改善半桥功率模块各并联芯片的抗串扰能力一致性，由此极大的提高了功率模块硬开关应用中的整体抗串扰能力。 通过以上研究工作，作者针对以SiC MOSFET为代表的宽禁带半导体电力电子器件在应用过程中碰到的难点，从理论和实践上寻求突破，发现了关系到器件可靠性的热失控温度、建立了更接近实测的器件模型、提出了抗串扰能力更强的模块驱动布局方式，为-宽禁带半导体电力电子器件的应用推广提供了切实的科学依据，为我国的新能源汽车等新兴产业的发展铺垫了可靠的理论基础。 关键词：SiCMOSFET、氮化镓GaN、热失控、动态电阻、功率模块、栅极分布阻抗模型、多芯片并联、串扰、米勒钳位

 Silicon carbide and other power electronic devices have shown great potential in the field of power electronic applications. However, due to the lack of sufficient understanding of the performance characteristics of these new materials, there are still considerable problems in the current practical application. In order to give full play to the advantages of these new materials in the system safely, we need to have a thorough understanding of the dynamic and static characteristics, circuit application performance, long-term operation stability and reliability of these devices. Among the new material power electronic devices, silicon carbide (SiC) MOSFET is widely used in energy, power, electric vehicles and other high-power applications because of its simpler and more reliable driving mode, more prominent performance characteristics and wider application scope. It is the most important new material power electronic device, and considered as an ideal substitute for traditional Si IGBT devices. Due to the limitation of single chip power capacity, multi-chip parallel connection is a common way of SiC MOSFET power module. However, there is a conflict between chip cost and performance requirements in multi-chip parallel connection. Quantitative research is needed to solve these problems, in order to further optimize the number of chips and the efficiency of the module. In addition, the most common basic circuit topology of SiC MOSEFT power module is halfbridge circuit. Crosstalk exists between upper and lower transistors in this circuit structure. The high-speed hard switch of SiC MOSFET aggravates the problem. Therefore, for multi-chip parallel SiC MOSFET power module, we need to further study and improve its basic circuit topology to better suppress crosstalk under high-speed hard switching. Based on the scientific problems in the above-mentioned professional fields, this paper records the following research work of the author: Firstly, the static and dynamic characteristics of commercial SiC diodes, SiC MOSFET, SiC JFET, SiC BJT and GaN HEMT as well as silicon Cool MOS (as a comparison) are tested and analyzed. Their performance characteristics are summarized and compared. At the same time, the author evaluates the change of on-resistance of SiC MOSFET under high temperature through high temperature storage, high temperature operation and self-recovery experiments of SiC MOSFET, and studies the high temperature stability of SiC MOSFET. In particular, in the aspect of the stability of SiC MOSFET, the author carries out the modeling, simulation and experimental verification based on the measured data for the first generation commercial SiC MOSFET device produced by Cree Company, infers its thermal run away temperature, and evaluates the thermal run away temperature of subsequent generations of SiC MOSFET, which provides a quantitative basis for the wide application of these devices in various fields. The safety index has great practical value. Next, the author completes the process of designing, manufacturing, testing and evaluating the multi-chip parallel SiC MOSFET module. Firstly, the design process of material selection, Layout impedance analysis, built-in decoupling capacitance calculation, chip spacing and analysis of a 4chip parallel SiC MOSFET is introduced in detail. Then, the performance of a 6-chip parallel SiC MOSFET module at different ambient temperatures (simulated vehicle ambient temperature) is tested on a 20 kW Boost test platform, and the ambient temperature is evaluated. Finally, the performance of SiC MOSFET module is evaluated step by step under different chip number, switching frequency, load and case temperature conditions: 1. The model of SiC MOSFET is established by using distributed gate impedance instead of traditional centralized gate impedance, and its accuracy is verified by experiments; 2. The Rogowski coil is tested by using this model as a standard. The accuracy of switching loss obtained by current loop measurement determines the rationality of data obtained by this method and the establishment of switching loss fitting model; 3.Then, combined with the above-mentioned model and conduction loss fitting model, the overall loss fitting data model is obtained; 4. The steady-state junction temperature and power consumption fitting data model is established based on the measurement; 5. The operational performance of various modules under different power conditions. The loss and thermal stability data fitting model can be tested and verified. 6. Finally, the performance of the module is evaluated and predicted based on the above two data fitting models. At the same time, the performance of SiC MOSFET and Si IGBT is compared in terms of efficiency and active area. In the last part of this paper, aiming at the problem of cross-talk between upper and lower tubes in high-speed hard switching of SiC MOSFET half-bridge circuit, the influence of different circuit parameters on gate voltage fluctuation caused by cross-talk and the effect of different clamping circuits on cross-talk suppression are analyzed, and the effect of loop inductance between miller clamping and switching devices on the clamping effect is studied. For the application of multichip parallel half-bridge module, this paper proposes a distributed miller clamp driver layout in the integrated module. The experiment proves that this method can not only suppress crosstalk, but also improve the crosstalk consistency of each device paralleled in the half-bridge power module, which greatly improves the overall crosstalk immunity of the hard switch application of the power module. Through the above research work, the author seeks a breakthrough in theory and practice in view of the difficulties encountered in the application of new material power electronic devices represented by SiC MOSFET, and finds out the thermal escape temperature related to the reliability of devices and establishes a closer approach. Key words: SiC MOSFET, GaN, thermal dissipation, dynamic resistance, power module, gate distribution impedance model, multi-chip parallel, crosstalk, miller clamp