集成门极换流晶闸管(IGCT)是一种新型大功率半导体器件，它是将门极换流晶闸管(GCT)和门极驱动器以低电感方式通过印制电路板(PCB)集成在一起，具有很好的应用前景。GCT的开通和关断需要借助集成门极“硬驱动”电路完成，驱动电路的优劣直接影响到器件的优良特性能否实现，因此必须严格控制电路中的杂散电感。并且，在驱动电路和应用系统的设计时缺少IGCT的电路仿真模型。本文针对以上问题，对4500V/4000AIGCT电路模型和驱动电路的关键技术进行研究和探讨，主要内容有以下几个方面： 1.研究IGCT的开关原理和内部换流机理，建立IGCT的“硬驱动”电路仿真模型(M-2T-3R-C)，该模型能够较准确地表征IGCT开关特性和内部换流机理，在电路仿真时可以替代GCT器件。对关键模型参数进行分析与提取，验证该模型的准确性。在此基础上建立了双芯GCT (Dual-GCT)的电路仿真模型，将仿真波形与同条件下的实验波形对比，验证了该模型的准确性。并基于SiC功率MOSFET的IGCT电路模型进行参数提取，仿真结果表明采用SiC功率MOSFET的电路模型与普通Si MOSFET的相比，可将IGCT的关断时间缩短3μs。该模型为IGCT及其派生器件的应用奠定了基础。 2.针对4500V/4000AIGCT的“硬驱动”要求，关断时门极电流的上升率要达到-4000A/μs以上，杂散电感必须控制在5nH。为了控制关断回路的杂散电感，首先对关断箝位电路进行优化分析，提取了箝位电容和箝位电阻的优化值。然后，研究关断回路的杂散电感的分布，优化电路布局抑制杂散电感，将关断回路总杂散电感从13.6nH降低到4.7nH，最终达到3.5nH，使门极电流峰值和上升率分别达到-6120A和-5720A/μs，满足4500V/4000AIGCT的驱动电路关断能力的要求。 3.根据“硬驱动”电路的指标，研究了开通、维持、关断驱动电路的工作原理，针对其各部分需要解决的关键问题，提出完整的电路原理图，基于本文所建立的IGCT硬驱动电路仿真模型进行电路仿真。为了防止GCT在通态时发生误关断，深入研究了二次触发电路，并确定了二次触发脉冲的幅值和上升率。研究了 IGCT驱动的逻辑控制和监测电路，设计了 4500V/4000AIGCT驱动电路。 4.设计并制作了4500V/4000AIGCT驱动电路PCB，搭建测试电路，对主驱动电路门极电流、阳极电压和监测电路进行实验验证。利用IGCT实验测试台，采用二次脉冲测试法对整体驱动电路进行测试，结果表明所设计的驱动电路可以实现对4500V/4000A IGCT的可靠驱动，并在体积、开通延迟时间、关断延迟时间等方面均优于ABB公司同等级IGCT产品的驱动板。 ①*本研究得到国家自然科学基金项目(编号：No.51477137)的资助 关键词：集成门极换流晶闸管；硬驱动；电路仿真模型；内部换流；杂散电感

 Integrated gate commutated thyristor (IGCT) is a new type of high-power semiconductor device, which integrates gate commutator thyristor (GCT) and gate driver through printed circuit board (PCB) in a low inductance way, and has a good application prospect. It is necessary to turn on and turn off the GCT by means of the integrated gate hard drive circuit. The advantages and disadvantages of the driving circuit directly affect the realization of the excellent characteristics of the device, so it is necessary to strictly control the stray inductance in the circuit. And, the circuit simulation model of IGCT is lacking in the design of driving circuit and application system. Aiming at the above problems, the key technologies of IGCT circuit model and drive circuit of 4500V/4000A IGCT are studied and discussed in this paper, the main contents are as follows: Firstly, the switch principle and internal commutation mechanism of IGCT are studied, and the hard-drive circuit simulation model (M-2T-3R-C)of IGCT is established. This model can accurately characterize the switching characteristics and internal commutation mechanism of GCT, which can replace the GCT device in the simulation. The key parameters of the model are analyzed and modified to verify the accuracy of the model. On this basis, the circuit simulation model of Dual-GCT is established the simulation waveform are compared with the experimental waveform under the same conditions, and the accuracy of the model is verified. Continue to extract the parameters of the circuit model based on SiC power MOSFET. The simulation results show that the switching speed of the circuit model based on SiC power MOSFET is 3 μs higher than that of ordinary MOSFET. This model has laid a foundation for broadening IGCT and its derived devices. Secondly, the turn-off circuit of 4500V/4000A IGCT has a higher requirement for hard drive. When it is turned off, the amplitude of gate current should be up to 4000A within 1 μs, and its rising rate should reach above -4000A/μs. The stray inductance must be controlled in 5nH. In order to control the stray inductance of the turn-off circuit, the optimal value of the clamp capacitance and the clamp resistance is extracted from the optimal analysis of the turn-off clamp circuit. Then to study the distribution of stray inductance in turn-off circuit, the extraction method of the stray inductance and the effective measures to reduce the stray inductance are proposed. The total stray inductance of the turn-off circuit is reduced from 13.6nH to 4.7nH, and finally to 3.5nH. The gate current peak and rising rates are -6120A and-5720A/μs, which can meet the requirement of the turn-off ability of the drive circuit of 4500V/4000AIGCT. Thirdly, according to the index of the hard drive circuit, the working principle of the main driver circuits of turn-on, on-state and turn-off is studied, and a complete circuit schematic diagram is proposed for the key problems to be solved. Based on the simulation model of the GCT hard drive circuit established in this paper, the circuit simulation is carried out. The second trigger is studied in depth to ensure the complete opening of all units in the GCT turn-on process and avoid the false turn-off of GCT in the on-state. The logic control and detection module of IGCT driver circuit are studied, and the 4500V/4000A IGCT driver circuit is designed. Lastly, the 4500V/4000A IGCT driver circuit PCB is designed and made. The experimental circuit is built to verify the gate current, anode voltage and monitoring circuit of the main drive circuit. The experimental verification of the whole circuit is carried out by using the IGCT test bench and the double pulse test method. The reliable drive of 4500V/4000A IGCT is realized, and in terms of volume, turn-on delay time, turn-off delay time, it is better than the drive board of the same grade IGCT products of ABB . ①* Projection supported by National Natural Science Foundation(No.51477137) Keywords: Integrated Gate Commutated Thyristor ; hard drive ; circuit simulation model ; internal commutation; stray inductance