紫外探测器无论在民用还是在国防军事领域都具有重要的作用和价值。新一代紫外探测器要求具备体积小、响应和恢复速度快、灵敏度高和制备成本低等特点。ZnO作为一种重要的II-VI族直接宽带隙半导体，由于具有禁带宽度大、不吸收可见光、光电性能好、化学性质稳定和制备成本低等优点，因而在紫外光探测领域具有广阔的应用前景。特别是ZnO优良的压电性能，更使得在调控和改善基于ZnO材料制备的光电器件性能方面增加了一种可选择的重要途径。但基于单一ZnO材料制作的光电导型紫外光探测器的光响应速度通常较慢，特别是恢复时间很长，从而限制了其实际应用。ZnO同质pn结型紫外光探测器的研究，又由于性能稳定的P型ZnO难以制取而缺乏较大进展。故而，近年来，构造各种基于ZnO的肖特基结和异质pn结型紫外光探测器已成为研究的关注点。 本论文围绕ZnO纳米棒阵列与连续致密膜的生长制备、p-NiO／nZnO异质结的构造及其紫外光响应性能测量与分析等相关问题，展开了一系列的研究工作。由于各种结型器件的光响应速度通常均很快，故本论文的研究重点是器件的恢复性能。主要内容包括以下几部分： (1)采用磁控溅射和水溶液法在蓝宝石衬底上制备了ZnO纳米棒阵列，利用扫描电子显微镜(SEM)、X射线衍射(XRD)和光致发光(PL)谱等表征手段对其形貌、结构、成分及光学特性等进行了测试分析。研究了ZnO纳米棒阵列退火前后的紫外响应特性，结果表明，550℃下退火可以减少ZnO中的缺陷数量，降低紫外探测器暗电流，从而有效增强ZnO紫外探测器的灵敏度。 (2)采用热蒸发氧化方法，在蓝宝石衬底上制备了NiO薄膜，并对不同氧化温度下制备的NiO薄膜进行了表征分析。结果表明，随着氧化温度的升高，NiO薄膜的缺陷减少，晶体质量提高。在此基础上，通过低温水溶液方法在不同氧化温度下制备的NiO薄膜上分别生长了ZnO纳米棒阵列，并对这些p-NiO／n-ZnO异质结样品的紫外光响应特性进行了研究。结果表明，在所研究的温度范围内，NiO膜的氧化温度越高，晶体质量越好，器件的恢复速度越快。 (3)在柔性的Ni薄片上通过热氧化工艺制备了NiO薄膜，并通过在传统水溶液中加入柠檬酸三钠的方法，成功地在这种柔性NiO薄膜上生长了致密连续的ZnO薄膜。这种致密的薄膜结构有效减少了ZnO与空气的接触面积，从而大幅度缩短了p-NiO／n-ZnO紫外光探测器的恢复时间。相较于ZnO纳米棒阵列与NiO薄膜构成的器件，致密ZnO薄膜与NiO薄膜构成的紫外探测器的恢复时间从25秒减少到8秒。在此基础上，利用ZnO的压电电子学与压电光电子学效应进一步缩短了该种柔性器件的恢复时间：在-1％、-2％和-4％的压应变情况下，器件的恢复时间分别由无应变时的8秒减少到7秒、3.6秒和2.4秒。 关键词：ZnO纳米棒阵列；紫外光探测器；p-NiO／n-ZnO异质结

 UV photodetector has very important application value in the civilian and military area, which needs small volume, fast response, high sensitivity, low cost and so on. Zinc oxide(ZnO), as a direct band-gap semiconductor, is considered a promising material for fabricating ultraviolet (UV) semiconductor detectors owing to its wide band gap (3.37eV), no absorbing at visible wavelengths, chemical stability, as well as rich raw materials. In this dissertation, we carried out a series of research work on the growth of ZnO nanorods array and ZnO continuous dense film, the construction of p-NiO/n-ZnO heterostructures, as well as the UV response performance of the corresponding photodetectors. The focus is the recovery performance of the devices. The main research contents and results are as follows: (1)ZnO nanorods array were grown on sapphire substrate by room temperature radio frequency magnetron sputtering and hydrothermal method. Scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, X-ray diffraction (XRD), and PL spectral analysis were used to characterize the ZnO nanorods array. The influence of annealing for the performance of ZnO UV photodetector is studied. The results showed that annealing can reduce the defect density of ZnO nanorods, thereby increasing the sensitivity of ZnO photodetector. (2)NiO thin film was fabricated by thermal oxidation at different temperatures and was characterized. The results showed that with the increase of oxidation temperature, the defect density of NiO thin film decreased, thereby the crystal quality improved. On this basis, the high-quality ZnO nanorods array were grown on the NiO film by hydrothermal growth processes. The performance of UV photodetectors based on the p-NiO/n-ZnO heterojunctions was characterized, illustrating that in the studied temperature range, the recovery speed of the devices was accelerating with decreasing defect density of the NiO thin film. (3)NiO thin films were prepared on flexible Ni foils by thermal oxidation process. And the continuous and dense ZnO films were fabricated on these NiO thin films using hydrothermal growth processes with Na₃C₆H₅O₇ as a crystal morphology-controlling agent. The ZnO film will reduce the adsorption quantity of oxygen and other gases, and then improve the photoresponse performance of NiO/ZnO heterojunction UV photodetectors. The recovery time of the heterojunction UV photodetector with ZnO film changes from 25s to 8s compared to the device with ZnO nanorods array. The piezotronic and piezo-phototronic effect of ZnO was used to further enhance the performance of UV photodetector. The compression strain had an enhancement effect on the time response of the photocurrent. The recovery time of the device reduced from 8s(0 strain) to 7s, 3.6s and 2.4s under the compression strain of -1 %, -2 % and -4 %. Key Words: ZnO nanorods array; UV photodetector; p-NiO/n-ZnO heterojunction